µBGA® -W Features and Benefits
  • Utilizes wire-bonding process
  • Short traces allow for low inductance and capacitance which enables a high performance chip scale package
  • Utilizes existing equipment and material infrastructure
  • Supports a range of ball pitches down to 0.8 mm
  • Versatility allows various DRAM types to be assembled in one CSP technology
  • Compatible with die shrink on center bond configurations
  • Package allows for center row and peripheral bond pads, in addition to parallel and staggered bond pad arrangements
  • Compliant layer enables high, on-board reliability by relieving solder ball stress
  • No board-level underfill is required, providing the option for rework
  • Suitable for applications requiring light weight, small footprint and thin profile